2N6661 by Microchip Technology

90V, 4 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET


2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Where to Buy

Prices starting from US$11.54

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Microchip Technology
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Newark Electronics
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Avnet America
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Farnell
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RS
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Future Electronics
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RS Americas
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Features

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain

Specifications

BVdss min (V) 90
Rds (on) max (Ohms) 4.0
CISSmax (pF) 50
Vgs(th) max (V) 2.0
Package TO-39

Last 6 months Inventory & Pricing History


Alternative Descriptions

MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V, 4 Ohm | Microchip Technology
Mosfet, N-Channel Enhancement Mode, 90V, 4 Ohm Rohs Compliant: Yes |Microchip Technology 2N6661. | Newark Electronics
MOSFET, N-CH, 90V, 1.5A, TO-39-3 | element14
MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V, | RS
2N6661 Series 90 V 350mA N-Channel Enhancement-Mode Vertical DMOS FET- TO-39 | Future Electronics
Transistor: N-MOSFET | TME
MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V, 4 OHM3 TO-39 BAG | RS Americas


2N6661 Semiconductors - Discretes by Solid State Manufacturing

MOSFET N-CH 90V 0.9A TO-205AF

Status: Unknown
Series: -
RoHS: Unknown
Download Datasheet Visit Manufacturer Site View Pricing & Stock

Specifications

Transistor Polarity N Channel
Continuous Drain Current Id 900mA
Drain Source Voltage Vds 90V
On Resistance Rds(on) 3ohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 1.5V
Power Dissipation Pd 6.25W
Transistor Case Style TO-205AF
No. of Pins 3Pins
Operating Temperature Max 150°C
Product Range -
Automotive Qualification Standard -
MSL -
SVHC No SVHC (27-Jun-2018)

Last 6 months Inventory & Pricing History


Frequently Asked Questions

Where can I find additional details, specifications and documents for a 2N6661?

Additional datasheets, footprints and schematics for 2N6661 are listed on our Part Details page. You can also find images and similar parts to 2N6661 on this page.

What pricing and inventory information can I view?

Distributor pricing and stock information is available for 2N6661 on our Product Comparison page. Access via the 'View Pricing & Stock' button to view 2N6661 price breaks, MOQs, lead times, inventory and SKUs from distributors.

Who can I contact for technical support of the product?

Submit any questions directly to the customer support team of the distributor listing the product. For the 2N6661 you can contact the distributor directly for product support, shipping queries etc.

Is the 2N6661 RoHS compliant?

This part has not been flagged as RoHS Compliant.

Which authorised distributors for 2N6661 have stock available?

Authorised distributors including Microchip Technology, Newark Electronics, Avnet America, element14 and Farnell have stock available or on a lead time for 2N6661.

How do I check stock and lead times for all distributors?

Stock availability and lead times will be displayed for 2N6661 often in real-time on the comparison pages.

What if I can't find stock of 2N6661?

You can fill out our help required form which you can use to request a quote for 2N6661 from some of our verified obsolescence suppliers. Alternatively, contact us via our web chat in the bottom left of your screen and one of our team will try to help.